IXTQ120N15P
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IXYS IXTQ120N15P

Manufacturer No:
IXTQ120N15P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ120N15P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 120A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):600W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number IXTQ120N15P IXTQ150N15P   IXTQ120N15T  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 150A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 16mOhm @ 500mA, 10V 13mOhm @ 500mA, 10V 16mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 190 nC @ 10 V 150 nC @ 10 V
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 25 V 5800 pF @ 25 V 4900 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 600W (Tc) 714W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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