IXTQ102N25T
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IXYS IXTQ102N25T

Manufacturer No:
IXTQ102N25T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ102N25T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 250V 102A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:102A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number IXTQ102N25T IXTQ102N15T   IXTQ102N20T  
Manufacturer IXYS IXYS IXYS
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V 150 V 200 V
Current - Continuous Drain (Id) @ 25°C 102A (Tc) 102A (Tc) 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V -
Rds On (Max) @ Id, Vgs - 18mOhm @ 500mA, 10V 23mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id - 5V @ 1mA 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 87 nC @ 10 V 114 nC @ 10 V
Vgs (Max) - ±20V -
Input Capacitance (Ciss) (Max) @ Vds - 5220 pF @ 25 V 6800 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - 455W (Tc) 750W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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