IXTQ102N20T
  • Share:

IXYS IXTQ102N20T

Manufacturer No:
IXTQ102N20T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ102N20T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 102A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:102A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:23mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):750W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
0 Remaining View Similar

In Stock

-
550

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTQ102N20T IXTQ102N25T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 250 V
Current - Continuous Drain (Id) @ 25°C 102A (Tc) 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 23mOhm @ 500mA, 10V -
Vgs(th) (Max) @ Id 4.5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V -
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 750W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

Related Product By Categories

FDBL0210N80
FDBL0210N80
onsemi
MOSFET N-CH 80V 240A 8HPSOF
AOTF296L
AOTF296L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 10A/41A TO220F
TK2R4A08QM,S4X
TK2R4A08QM,S4X
Toshiba Semiconductor and Storage
UMOS10 TO-220SIS 80V 2.4MOHM
ATP304-TL-H
ATP304-TL-H
onsemi
MOSFET P-CH 60V 100A ATPAK
SUM90220E-GE3
SUM90220E-GE3
Vishay Siliconix
MOSFET N-CH 200V 64A D2PAK
IRFR214BTFFP001
IRFR214BTFFP001
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
IPLK80R2K0P7ATMA1
IPLK80R2K0P7ATMA1
Infineon Technologies
MOSFET 800V TDSON-8
DMTH6016LK3-13
DMTH6016LK3-13
Diodes Incorporated
MOSFET N-CH 60V 10.8 TO252 T&R
IPP120N10S403AKSA1
IPP120N10S403AKSA1
Infineon Technologies
MOSFET N-CH 100V 120A TO220-3
RF1S25N06
RF1S25N06
Harris Corporation
25A, 60V, 0.047 OHM, N-CHANNEL P
FQD4N20LTM
FQD4N20LTM
onsemi
MOSFET N-CH 200V 3.2A DPAK
IRLU110ATU
IRLU110ATU
onsemi
MOSFET N-CH 100V 4.7A I-PAK

Related Product By Brand

MEA95-06DA
MEA95-06DA
IXYS
DIODE MODULE 600V 95A TO240AA
MDD26-18N1B
MDD26-18N1B
IXYS
DIODE MODULE 1.8KV 36A TO240AA
DSA30C150PC-TRL
DSA30C150PC-TRL
IXYS
POWER DIODE DISCRETES-SCHOTTKY T
IXTP28P065T
IXTP28P065T
IXYS
MOSFET P-CH 65V 28A TO220AB
IXFX48N60Q3
IXFX48N60Q3
IXYS
MOSFET N-CH 600V 48A PLUS247-3
IXTA200N055T2
IXTA200N055T2
IXYS
MOSFET N-CH 55V 200A TO263
IXKR47N60C5
IXKR47N60C5
IXYS
MOSFET N-CH 600V 47A ISOPLUS247
IXFH6N90
IXFH6N90
IXYS
MOSFET N-CH 900V 6A TO247AD
IXFH12N100
IXFH12N100
IXYS
MOSFET N-CH 1000V 12A TO247AD
IXFR14N100Q2
IXFR14N100Q2
IXYS
MOSFET N-CH 1000V 9.5A ISOPLS247
IXSN50N60BD3
IXSN50N60BD3
IXYS
IGBT MOD 600V 75A 250W SOT227B
IXYP15N65C3D1
IXYP15N65C3D1
IXYS
IGBT 650V 38A 200W TO220