IXTQ102N20T
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IXYS IXTQ102N20T

Manufacturer No:
IXTQ102N20T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ102N20T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 102A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:102A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:23mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):750W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number IXTQ102N20T IXTQ102N25T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 250 V
Current - Continuous Drain (Id) @ 25°C 102A (Tc) 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 23mOhm @ 500mA, 10V -
Vgs(th) (Max) @ Id 4.5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V -
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 750W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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