IXTQ102N15T
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IXYS IXTQ102N15T

Manufacturer No:
IXTQ102N15T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTQ102N15T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 102A TO3P
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:102A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5220 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):455W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number IXTQ102N15T IXTQ102N25T  
Manufacturer IXYS IXYS
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 250 V
Current - Continuous Drain (Id) @ 25°C 102A (Tc) 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 18mOhm @ 500mA, 10V -
Vgs(th) (Max) @ Id 5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 5220 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 455W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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