IXTP8N70X2
  • Share:

IXYS IXTP8N70X2

Manufacturer No:
IXTP8N70X2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP8N70X2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 700V 8A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$4.12
233

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP8N70X2 IXTP8N70X2M  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 700 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 500mA, 10V 550mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 10 V 800 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220 Isolated Tab
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab

Related Product By Categories

UPA2807T1L-E1-AT
UPA2807T1L-E1-AT
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IRFSL7437PBF
IRFSL7437PBF
Infineon Technologies
MOSFET N-CH 40V 195A TO262
IXFH15N100Q3
IXFH15N100Q3
IXYS
MOSFET N-CH 1000V 15A TO247AD
PJD25N04-AU_L2_000A1
PJD25N04-AU_L2_000A1
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
PSMN2R9-25YLC,115
PSMN2R9-25YLC,115
Nexperia USA Inc.
MOSFET N-CH 25V 100A LFPAK56
TPH1110ENH,L1Q
TPH1110ENH,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 200V 7.2A 8SOP
STL19N60M2
STL19N60M2
STMicroelectronics
MOSFET N-CH 600V 11A PWRFLAT HV
FQI9N15TU
FQI9N15TU
onsemi
MOSFET N-CH 150V 9A I2PAK
IPI45N06S409AKSA1
IPI45N06S409AKSA1
Infineon Technologies
MOSFET N-CH 60V 45A TO262-3
NTD4863NT4G
NTD4863NT4G
onsemi
MOSFET N-CH 25V 9.2A/49A DPAK
IPS70R600CEAKMA1
IPS70R600CEAKMA1
Infineon Technologies
MOSFET N-CH 700V 10.5A TO251-3
RRS075P03FRATB
RRS075P03FRATB
Rohm Semiconductor
MOSFET P-CH 30V 7.5A 8SOP

Related Product By Brand

VUO16-12NO1
VUO16-12NO1
IXYS
BRIDGE RECT 3P 1.2KV 20A V1-A
DSEI12-12AZ-TUB
DSEI12-12AZ-TUB
IXYS
POWER DIODE DISCRETES-FRED TO-26
MCD132-08IO1
MCD132-08IO1
IXYS
MOD THYRISTOR/DIODE 800V Y4-M6
CS45-16IO1
CS45-16IO1
IXYS
SCR 1.6KV 75A TO247AD
IXTA180N085T7
IXTA180N085T7
IXYS
MOSFET N-CH 85V 180A TO263-7
IXA37IF1200HJ
IXA37IF1200HJ
IXYS
IGBT 1200V 58A 195W TO247
IXGH32N170A
IXGH32N170A
IXYS
IGBT 1700V 32A 350W TO247
IXYX120N120C3
IXYX120N120C3
IXYS
IGBT 1200V 240A 1500W PLUS247
IXYP30N120C3
IXYP30N120C3
IXYS
IGBT 1200V 75A 500W TO220
IXGH32N60AU1
IXGH32N60AU1
IXYS
IGBT 600V 60A 200W TO247AD
IXGT35N120B
IXGT35N120B
IXYS
IGBT 1200V 70A 300W TO268
IXDE509SIAT/R
IXDE509SIAT/R
IXYS
IC GATE DRVR LOW-SIDE 8SOIC