IXTP8N65X2
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IXYS IXTP8N65X2

Manufacturer No:
IXTP8N65X2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP8N65X2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 8A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number IXTP8N65X2 IXTP8N65X2M   IXTP2N65X2   IXTP4N65X2  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 4A (Tc) 2A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V 550mOhm @ 4A, 10V 2.3Ohm @ 1A, 10V 850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 12 nC @ 10 V 4.3 nC @ 10 V 8.3 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V 800 pF @ 25 V 180 pF @ 25 V 455 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 150W (Tc) 32W (Tc) 55W (Tc) 80W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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