IXTP80N10T
  • Share:

IXYS IXTP80N10T

Manufacturer No:
IXTP80N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP80N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 80A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3040 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):230W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.32
19

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP80N10T IXTP60N10T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 25A, 10V 18mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 49 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3040 pF @ 25 V 2650 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 230W (Tc) 176W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

SPB08N03L
SPB08N03L
Infineon Technologies
N-CHANNEL POWER MOSFET
SI3460BDV-T1-E3
SI3460BDV-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 8A 6TSOP
IRF8010STRLPBF
IRF8010STRLPBF
Infineon Technologies
MOSFET N-CH 100V 80A D2PAK
IRF9333TRPBF
IRF9333TRPBF
Infineon Technologies
MOSFET P-CH 30V 9.2A 8SO
STP6N60M2
STP6N60M2
STMicroelectronics
MOSFET N-CH 600V 4.5A TO220
ZVN3306ASTOB
ZVN3306ASTOB
Diodes Incorporated
MOSFET N-CH 60V 270MA E-LINE
IPP06CNE8N G
IPP06CNE8N G
Infineon Technologies
MOSFET N-CH 85V 100A TO220-3
SPP20N65C3HKSA1
SPP20N65C3HKSA1
Infineon Technologies
MOSFET N-CH 650V 20.7A TO220-3
STD30NF06
STD30NF06
STMicroelectronics
MOSFET N-CH 60V 28A DPAK
ATP112-TL-H
ATP112-TL-H
onsemi
MOSFET P-CH 60V 25A ATPAK
5HN01S-TL-E
5HN01S-TL-E
onsemi
MOSFET N-CH 50V 100MA SMCP3
R6030ENZ4C13
R6030ENZ4C13
Rohm Semiconductor
MOSFET N-CH 600V 30A TO247

Related Product By Brand

VBO13-16AO2
VBO13-16AO2
IXYS
BRIDGE RECT 1P 1.6KV 18A FO-A
VUO80-18NO1
VUO80-18NO1
IXYS
BRIDGE RECT 3P 1.8KV 82A V1-A
VBO20-12AO2
VBO20-12AO2
IXYS
BRIDGE RECT 1P 1.2KV 31A FO-A
VUO22-18NO1
VUO22-18NO1
IXYS
BRIDGE RECT 3P 1.8KV 25A V1-A
DSS20-0015B
DSS20-0015B
IXYS
DIODE SCHOTTKY 15V 20A TO220AC
IXTH48P20P
IXTH48P20P
IXYS
MOSFET P-CH 200V 48A TO247
IXFT32N100XHV
IXFT32N100XHV
IXYS
MOSFET N-CH 1000V 32A TO268HV
IXTP24P085T
IXTP24P085T
IXYS
MOSFET P-CH 85V 24A TO220AB
IXTH6N120
IXTH6N120
IXYS
MOSFET N-CH 1200V 6A TO247
IXFL38N100Q2
IXFL38N100Q2
IXYS
MOSFET N-CH 1000V 29A ISOPLUS264
IXFH60N20
IXFH60N20
IXYS
MOSFET N-CH 200V 60A TO247AD
IXFR15N100P
IXFR15N100P
IXYS
MOSFET N-CH 1000V ISOPLUS247