IXTP7N60PM
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IXYS IXTP7N60PM

Manufacturer No:
IXTP7N60PM
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP7N60PM Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 4A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.1Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id:5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):41W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP7N60PM IXTP7N60P  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 3.5A, 10V 1.1Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 100µA 5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1180 pF @ 25 V 1080 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 41W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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