IXTP6N50P
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IXYS IXTP6N50P

Manufacturer No:
IXTP6N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP6N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 6A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.1Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:14.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP6N50P IXTP8N50P   IXTP3N50P   IXTP5N50P  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 8A (Tc) 3.6A (Tc) 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.1Ohm @ 3A, 10V 800mOhm @ 4A, 10V 2Ohm @ 1.8A, 10V 1.4Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id 5V @ 50µA 5.5V @ 100µA 5.5V @ 50µA 5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 14.6 nC @ 10 V 20 nC @ 10 V 9.3 nC @ 10 V 12.6 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 25 V 1050 pF @ 25 V 409 pF @ 25 V 620 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 100W (Tc) 150W (Tc) 70W (Tc) 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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