IXTP6N100D2
  • Share:

IXYS IXTP6N100D2

Manufacturer No:
IXTP6N100D2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP6N100D2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 6A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2650 pF @ 25 V
FET Feature:Depletion Mode
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$7.73
28

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP6N100D2 IXTP3N100D2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V 5.5Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V 37.5 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V 1020 pF @ 25 V
FET Feature Depletion Mode Depletion Mode
Power Dissipation (Max) 300W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

DMG3404L-7
DMG3404L-7
Diodes Incorporated
MOSFET N-CH 30V 4.2A SOT23
IRF9630
IRF9630
Harris Corporation
MOSFET P-CH 200V 6.5A TO220AB
SI6415DQ-T1-E3
SI6415DQ-T1-E3
Vishay Siliconix
MOSFET P-CH 30V 6.5A 8TSSOP
CSD19531Q5A
CSD19531Q5A
Texas Instruments
MOSFET N-CH 100V 100A 8VSON
DMG4413LSS-13
DMG4413LSS-13
Diodes Incorporated
MOSFET P-CH 30V 10.5A 8SOP
SIHD12N50E-GE3
SIHD12N50E-GE3
Vishay Siliconix
MOSFET N-CH 550V 10.5A DPAK
2N6756
2N6756
Harris Corporation
N-CHANNEL POWER MOSFET
IXFP30N60X
IXFP30N60X
IXYS
MOSFET N-CH 600V 30A TO220
IXFK90N30
IXFK90N30
IXYS
MOSFET N-CH 300V 90A TO-264
STP10NK50Z
STP10NK50Z
STMicroelectronics
MOSFET N-CH 500V 9A TO220AB
PMV30UN,215
PMV30UN,215
NXP USA Inc.
MOSFET N-CH 20V 5.7A TO236AB
SI7160DP-T1-E3
SI7160DP-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 20A PPAK SO-8

Related Product By Brand

DSEC29-02AS-TUB
DSEC29-02AS-TUB
IXYS
DIODE ARRAY GP 200V 15A TO263
DGS4-025A
DGS4-025A
IXYS
DIODE SCHOTTKY 250V 5.4A TO220AC
IXTA4N65X2
IXTA4N65X2
IXYS
MOSFET N-CH 650V 4A TO263
IXTP14N60P
IXTP14N60P
IXYS
MOSFET N-CH 600V 14A TO220AB
IXTA60N10T-TRL
IXTA60N10T-TRL
IXYS
MOSFET N-CH 100V 60A TO263
IXTA110N055T2
IXTA110N055T2
IXYS
MOSFET N-CH 55V 110A TO263
IXTP3N110
IXTP3N110
IXYS
MOSFET N-CH 1100V 3A TO220AB
IXA12IF1200PB
IXA12IF1200PB
IXYS
IGBT 1200V 20A 85W TO220
IXYA20N120C4HV
IXYA20N120C4HV
IXYS
IGBT 1200V 20A X4 HSPEED TO263D2
IXYH40N90C3
IXYH40N90C3
IXYS
IGBT 900V 105A 600W TO247
IXDR35N60BD1
IXDR35N60BD1
IXYS
IGBT 600V 38A 125W ISOPLUS247
IXGA20N120B
IXGA20N120B
IXYS
IGBT 1200V 40A 150W TO263