IXTP60N10T
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IXYS IXTP60N10T

Manufacturer No:
IXTP60N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP60N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 60A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2650 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):176W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP60N10T IXTP60N20T   IXTP80N10T   IXTP160N10T  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Tc) 80A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 25A, 10V 40mOhm @ 30A, 10V 14mOhm @ 25A, 10V 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 5V @ 250µA 5V @ 100µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V 73 nC @ 10 V 60 nC @ 10 V 132 nC @ 10 V
Vgs (Max) ±30V ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V 4530 pF @ 25 V 3040 pF @ 25 V 6600 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 176W (Tc) 500W (Tc) 230W (Tc) 430W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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