IXTP4N70X2M
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IXYS IXTP4N70X2M

Manufacturer No:
IXTP4N70X2M
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP4N70X2M Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 700V 4A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:386 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Isolated Tab
Package / Case:TO-220-3 Full Pack, Isolated Tab
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Similar Products

Part Number IXTP4N70X2M IXTP8N70X2M  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 700 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 2A, 10V 550mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 386 pF @ 25 V 800 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 Isolated Tab TO-220 Isolated Tab
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack, Isolated Tab

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