IXTP44N10T
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IXYS IXTP44N10T

Manufacturer No:
IXTP44N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP44N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 44A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:30mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1262 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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$1.88
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Similar Products

Part Number IXTP44N10T IXTP44N15T   IXTP44N30T  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 150 V 300 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc) 44A (Tc) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - -
Rds On (Max) @ Id, Vgs 30mOhm @ 22A, 10V - -
Vgs(th) (Max) @ Id 4.5V @ 25µA - -
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V - -
Vgs (Max) ±30V - -
Input Capacitance (Ciss) (Max) @ Vds 1262 pF @ 25 V - -
FET Feature - - -
Power Dissipation (Max) 130W (Tc) - -
Operating Temperature -55°C ~ 175°C (TJ) - -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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