IXTP3N50P
  • Share:

IXYS IXTP3N50P

Manufacturer No:
IXTP3N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP3N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 3.6A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id:5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:409 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
88

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP3N50P IXTP5N50P   IXTP6N50P   IXTP8N50P   IXTP3N60P  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 4.8A (Tc) 6A (Tc) 8A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.8A, 10V 1.4Ohm @ 2.4A, 10V 1.1Ohm @ 3A, 10V 800mOhm @ 4A, 10V 2.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 50µA 5.5V @ 50µA 5V @ 50µA 5.5V @ 100µA 5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V 12.6 nC @ 10 V 14.6 nC @ 10 V 20 nC @ 10 V 9.8 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 409 pF @ 25 V 620 pF @ 25 V 740 pF @ 25 V 1050 pF @ 25 V 411 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 70W (Tc) 89W (Tc) 100W (Tc) 150W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

AOD7S60
AOD7S60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 7A TO252
SIA459EDJ-T1-GE3
SIA459EDJ-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 9A PPAK SC70-6
DMN10H170SK3-13
DMN10H170SK3-13
Diodes Incorporated
MOSFET N-CH 100V 12A TO252-3
FDN5632N-F085
FDN5632N-F085
onsemi
MOSFET N-CH 60V 1.7A SUPERSOT3
IRF9520PBF-BE3
IRF9520PBF-BE3
Vishay Siliconix
MOSFET P-CH 100V 6.8A TO220AB
IPS70R360P7SAKMA1
IPS70R360P7SAKMA1
Infineon Technologies
MOSFET N-CH 700V 12.5A TO251-3
TK100A10N1,S4X
TK100A10N1,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 100A TO220SIS
RM150N60HD
RM150N60HD
Rectron USA
MOSFET N-CH 60V 150A TO263-2
IXTQ16N50P
IXTQ16N50P
IXYS
MOSFET N-CH 500V 16A TO3P
BUK7Y98-80E,115
BUK7Y98-80E,115
NXP Semiconductors
NEXPERIA BUK7Y98 - N-CHANNEL 80
94-4764
94-4764
Infineon Technologies
MOSFET N-CH 30V 140A TO262
AUIRF9Z34N
AUIRF9Z34N
Infineon Technologies
MOSFET P-CH 55V 19A TO220AB

Related Product By Brand

DHH55-36N1F
DHH55-36N1F
IXYS
DIODE ARRAY GP 1800V 60A I4PAC
DPF60IM400HB
DPF60IM400HB
IXYS
DIODE GEN PURP 400V 60A TO247AD
MCD95-12IO8B
MCD95-12IO8B
IXYS
MOD THYRISTOR/DIO 1200V TO-240AA
IXFP36N60X3
IXFP36N60X3
IXYS
MOSFET ULTRA JCT 600V 36A TO220
IXTY1N80P
IXTY1N80P
IXYS
MOSFET N-CH 800V 1A TO252
IXFT54N65X3HV
IXFT54N65X3HV
IXYS
MOSFET 54A 650V X3 TO268HV
IXTP3N60P
IXTP3N60P
IXYS
MOSFET N-CH 600V 3A TO220AB
IXFN44N60
IXFN44N60
IXYS
MOSFET N-CH 600V 44A SOT-227B
IXTY2N80P
IXTY2N80P
IXYS
MOSFET N-CH 800V 2A TO252
IXYN140N120A4
IXYN140N120A4
IXYS
IGBT 140A 1200V SOT227B MINIBLOC
IXYP30N65C3
IXYP30N65C3
IXYS
DISC IGBT XPT-GENX3 TO-220AB/FP
IXGP24N60C4
IXGP24N60C4
IXYS
IGBT 600V 56A 190W TO220