IXTP36N30T
  • Share:

IXYS IXTP36N30T

Manufacturer No:
IXTP36N30T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP36N30T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 36A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:110mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:2250 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
129

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP36N30T IXTP36N20T   IXTP36N30P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 200 V 300 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 36A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 500mA, 10V - 110mOhm @ 18A, 10V
Vgs(th) (Max) @ Id - - 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V - 70 nC @ 10 V
Vgs (Max) - - ±30V
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 25 V - 2250 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - - 300W (Tc)
Operating Temperature - - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

SFR9224TM
SFR9224TM
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
IRF8301MTRPBF
IRF8301MTRPBF
Infineon Technologies
MOSFET N-CH 30V 34A DIRECTFET
ISZ0501NLSATMA1
ISZ0501NLSATMA1
Infineon Technologies
25V, N-CH MOSFET, LOGIC LEVEL, P
STU2NK100Z
STU2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A IPAK
IXFA90N20X3
IXFA90N20X3
IXYS
MOSFET N-CH 200V 90A TO263AA
SIR680LDP-T1-RE3
SIR680LDP-T1-RE3
Vishay Siliconix
MOSFET N-CH 80V 31.8A/130A PPAK
IXTA08N100D2-TRL
IXTA08N100D2-TRL
IXYS
MOSFET N-CH 1000V 800MA TO263
IRFB17N20D
IRFB17N20D
Infineon Technologies
MOSFET N-CH 200V 16A TO220AB
SPD100N03S2L-04
SPD100N03S2L-04
Infineon Technologies
MOSFET N-CH 30V 100A TO252-5
NTD20N06-001
NTD20N06-001
onsemi
MOSFET N-CH 60V 20A IPAK
STU8NM60ND
STU8NM60ND
STMicroelectronics
MOSFET N-CH 600V 7A IPAK
IPB039N04LGATMA1
IPB039N04LGATMA1
Infineon Technologies
MOSFET N-CH 40V 80A D2PAK

Related Product By Brand

W6672TJ350
W6672TJ350
IXYS
DIODE GEN PURP 1.9KV 6672A -
MCD56-16IO8B
MCD56-16IO8B
IXYS
MOD THYRISTOR/DIO 1600V TO-240AA
MCNA180P2200YA
MCNA180P2200YA
IXYS
BIPOLAR MODULE - THYRISTOR Y4-M
IXFT100N30X3HV
IXFT100N30X3HV
IXYS
MOSFET N-CH 300V 100A TO268HV
IXTP150N15X4
IXTP150N15X4
IXYS
MOSFET N-CH 150V 150A TO220
IXTP05N100
IXTP05N100
IXYS
MOSFET N-CH 1000V 750MA TO220AB
IXTK33N50
IXTK33N50
IXYS
MOSFET N-CH 500V 33A TO264
IXXH60N65C4
IXXH60N65C4
IXYS
IGBT 650V 118A 455W TO247AD
IXGR48N60B3D1
IXGR48N60B3D1
IXYS
IGBT 600V 60A 150W ISOPLUS247
IXSR40N60CD1
IXSR40N60CD1
IXYS
IGBT 600V 62A 210W ISOPLUS247
IX6R11S6
IX6R11S6
IXYS
IC GATE DRVR HALF-BRIDGE 18SOIC
IXDE514PI
IXDE514PI
IXYS
IC GATE DRVR LOW-SIDE 8DIP