IXTP36N30P
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IXYS IXTP36N30P

Manufacturer No:
IXTP36N30P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP36N30P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 36A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2250 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP36N30P IXTP36N30T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 110mOhm @ 18A, 10V 110mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 25 V 2250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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