IXTP32P20T
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IXYS IXTP32P20T

Manufacturer No:
IXTP32P20T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP32P20T Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 200V 32A TO220AB
Delivery:
Payment:
iso14001
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iso9001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:185 nC @ 10 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:14500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP32P20T IXTP32N20T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 16A, 10V 72mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 14500 pF @ 25 V 1760 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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