IXYS-IXTP2R4N50P - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500 V
Current - Continuous Drain (Id) @ 25°C:	2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	3.75Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:	6.1 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	240 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	55W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220-3
Package / Case:	TO-220-3

IXYS IXTP2R4N50P