IXTP2N65X2
  • Share:

IXYS IXTP2N65X2

Manufacturer No:
IXTP2N65X2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP2N65X2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 2A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):55W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.76
90

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP2N65X2 IXTP4N65X2   IXTP8N65X2   IXTP12N65X2   IXTP20N65X2   IXTP24N65X2  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 4A (Tc) 8A (Tc) 12A (Tc) 20A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.3Ohm @ 1A, 10V 850mOhm @ 2A, 10V 500mOhm @ 4A, 10V 300mOhm @ 6A, 10V 185mOhm @ 10A, 10V 145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4.5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 10 V 8.3 nC @ 10 V 12 nC @ 10 V 17 nC @ 10 V 27 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 25 V 455 pF @ 25 V 800 pF @ 25 V 1100 pF @ 25 V 1450 pF @ 25 V 2060 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 55W (Tc) 80W (Tc) 150W (Tc) 180W (Tc) 290W (Tc) 390W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

2SK3113-AZ
2SK3113-AZ
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
STP6N90K5
STP6N90K5
STMicroelectronics
MOSFET N-CH 900V 6A TO220
IRF7420TRPBF
IRF7420TRPBF
Infineon Technologies
MOSFET P-CH 12V 11.5A 8SO
IXTP10P50P
IXTP10P50P
IXYS
MOSFET P-CH 500V 10A TO220AB
DMN313DLT-7
DMN313DLT-7
Diodes Incorporated
MOSFET N-CH 30V 270MA SOT523
IXFB44N100Q3
IXFB44N100Q3
IXYS
MOSFET N-CH 1000V 44A PLUS264
IXTK88N30P
IXTK88N30P
IXYS
MOSFET N-CH 300V 88A TO264
SI3434DV-T1-E3
SI3434DV-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 4.6A 6TSOP
IRFR4620PBF
IRFR4620PBF
Infineon Technologies
MOSFET N-CH 200V 24A D-PAK
FDZ371PZ
FDZ371PZ
onsemi
MOSFET P-CH 20V 3.7A 4WLCSP
IRF6709S2TR1PBF
IRF6709S2TR1PBF
Infineon Technologies
MOSFET N-CH 25V 12A DIRECTFET
NVD5484NLT4G
NVD5484NLT4G
onsemi
MOSFET N-CH 60V 10.7A/54A DPAK-3

Related Product By Brand

VUB72-16NO1
VUB72-16NO1
IXYS
BRIDGE RECT 3P 1.6KV 110A V1-A
DPG30I400HA
DPG30I400HA
IXYS
DIODE GEN PURP 400V 30A TO247
CMA40E1600HR
CMA40E1600HR
IXYS
SCR 1.6KV 63A ISO247
IXTH6N50D2
IXTH6N50D2
IXYS
MOSFET N-CH 500V 6A TO247
IXTP2N100P
IXTP2N100P
IXYS
MOSFET N-CH 1000V 2A TO220AB
IXFX240N15T2
IXFX240N15T2
IXYS
MOSFET N-CH 150V 240A PLUS247-3
IXTP110N055T2
IXTP110N055T2
IXYS
MOSFET N-CH 55V 110A TO220AB
IXTA4N80P
IXTA4N80P
IXYS
MOSFET N-CH 800V 3.6A TO263
IXFH120N25T
IXFH120N25T
IXYS
MOSFET N-CH 250V 120A TO247AD
IXFY4N60P3
IXFY4N60P3
IXYS
MOSFET N-CH 600V 4A TO252
IXGH30N120IH
IXGH30N120IH
IXYS
IGBT 1200V 50A TO-247
IXGQ180N33TC
IXGQ180N33TC
IXYS
IGBT 330V 180A TO3P