IXTP2N100P
  • Share:

IXYS IXTP2N100P

Manufacturer No:
IXTP2N100P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP2N100P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 2A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:24.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:655 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):86W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.41
73

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP2N100P IXTP3N100P   IXTP1N100P   IXTP2N100  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 3A (Tc) 1A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 4.8Ohm @ 1.5A, 10V 15Ohm @ 500mA, 10V 7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 250µA 4.5V @ 50µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24.3 nC @ 10 V 39 nC @ 10 V 15.5 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 655 pF @ 25 V 1100 pF @ 25 V 331 pF @ 25 V 825 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 86W (Tc) 125W (Tc) 50W (Tc) 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

FCH47N60NF
FCH47N60NF
onsemi
MOSFET N-CH 600V 45.8A TO247-3
PJE8408_R1_00001
PJE8408_R1_00001
Panjit International Inc.
SOT-523, MOSFET
SIDR170DP-T1-RE3
SIDR170DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 100V 23.2A/95A PPAK
TPN5R203PL,LQ
TPN5R203PL,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 38A 8TSON
PSMN041-80YLX
PSMN041-80YLX
Nexperia USA Inc.
MOSFET N-CH 80V 25A LFPAK56
FDMC86320
FDMC86320
onsemi
MOSFET N-CH 80V 10.7A/22A 8MLP
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
SPP21N10
SPP21N10
Infineon Technologies
MOSFET N-CH 100V 21A TO220-3
IPP03N03LA
IPP03N03LA
Infineon Technologies
MOSFET N-CH 25V 80A TO220-3
FQD2N80TF
FQD2N80TF
onsemi
MOSFET N-CH 800V 1.8A DPAK
GA05JT12-263
GA05JT12-263
GeneSiC Semiconductor
TRANS SJT 1200V 15A D2PAK
RQ5E035BNTCL
RQ5E035BNTCL
Rohm Semiconductor
MOSFET N-CH 30V 3.5A TSMT3

Related Product By Brand

DPG20C300PB
DPG20C300PB
IXYS
DIODE ARRAY GP 300V 10A TO220AB
DSSK10-018A
DSSK10-018A
IXYS
DIODE ARRAY SCHOTTKY 180V TO220
IXTA52P10P
IXTA52P10P
IXYS
MOSFET P-CH 100V 52A TO263
IXTY44N10T
IXTY44N10T
IXYS
MOSFET N-CH 100V 44A TO252
IXTP24N65X2M
IXTP24N65X2M
IXYS
MOSFET N-CH 650V 24A TO220
IXFT20N80Q
IXFT20N80Q
IXYS
MOSFET N-CH 800V 20A TO268
IXTH21N50
IXTH21N50
IXYS
MOSFET N-CH 500V 21A TO247
IXXH30N60B3
IXXH30N60B3
IXYS
IGBT 600V TO247
IXXP50N60B3
IXXP50N60B3
IXYS
IGBT
IXGH24N170AH1
IXGH24N170AH1
IXYS
IGBT 1700V 24A 250W TO247AD
IXGR60N60C2G1
IXGR60N60C2G1
IXYS
IGBT 600V 75A ISOPLUS247
IXA611S3
IXA611S3
IXYS
IC GATE DRVR HALF-BRIDGE 16SOIC