IXTP2N100
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IXYS IXTP2N100

Manufacturer No:
IXTP2N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP2N100 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 2A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:825 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP2N100 IXTP2N100P   IXTP1N100  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 2A (Tc) 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 7Ohm @ 1A, 10V 7.5Ohm @ 500mA, 10V 11Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 100µA 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 24.3 nC @ 10 V 14.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 825 pF @ 25 V 655 pF @ 25 V 400 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 100W (Tc) 86W (Tc) 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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