IXTP230N04T4M
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IXYS IXTP230N04T4M

Manufacturer No:
IXTP230N04T4M
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP230N04T4M Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 230A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:230A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 115A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:7400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Isolated Tab
Package / Case:TO-220-3 Full Pack, Isolated Tab
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Similar Products

Part Number IXTP230N04T4M IXTP230N04T4  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 230A (Tc) 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 115A, 10V 2.9mOhm @ 115A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V 140 nC @ 10 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 7400 pF @ 25 V 7400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 40W (Tc) 340W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 Isolated Tab TO-220-3
Package / Case TO-220-3 Full Pack, Isolated Tab TO-220-3

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