IXTP220N04T2
  • Share:

IXYS IXTP220N04T2

Manufacturer No:
IXTP220N04T2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP220N04T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 220A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:220A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:112 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6820 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.97
126

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP220N04T2 IXTP120N04T2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 220A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 50A, 10V 6.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V 58 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6820 pF @ 25 V 3240 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 360W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

BSB044N08NN3GXUMA1
BSB044N08NN3GXUMA1
Infineon Technologies
MOSFET N-CH 80V 18A/90A 2WDSON
SSM3K335R,LF
SSM3K335R,LF
Toshiba Semiconductor and Storage
MOSFET N CH 30V 6A SOT-23F
RJK03N6DPA-00#J5A
RJK03N6DPA-00#J5A
Renesas Electronics America Inc
MOSFET N-CH 30V 40A 8WPAK
SSM3K318R,LF
SSM3K318R,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 2.5A SOT23F
SQS405ENW-T1_GE3
SQS405ENW-T1_GE3
Vishay Siliconix
MOSFET P-CH 12V 16A PPAK1212-8
DMP3165LQ-7
DMP3165LQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
DMT3020LFDF-13
DMT3020LFDF-13
Diodes Incorporated
MOSFET N-CH 30V 8.4A 6UDFN
IRF540L
IRF540L
Vishay Siliconix
MOSFET N-CH 100V 28A TO262
NTD3813N-1G
NTD3813N-1G
onsemi
MOSFET N-CH 16V 9.6A/51A IPAK
AO4706
AO4706
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 16.5A 8SOIC
SI3445DV-T1-GE3
SI3445DV-T1-GE3
Vishay Siliconix
MOSFET P-CH 8V 6TSOP
AOTF14N50FD
AOTF14N50FD
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 500V 14A TO220-3F

Related Product By Brand

DSEP2X60-12A
DSEP2X60-12A
IXYS
DIODE MODULE 1.2KV 60A SOT227B
MCD162-12IO1
MCD162-12IO1
IXYS
MOD THYRISTOR/DIODE 1200V Y4-M6
MCC225-18IO1
MCC225-18IO1
IXYS
MOD THYRISTOR DUAL 1800V Y1-CU
FMM150-0075X2F
FMM150-0075X2F
IXYS
MOSFET 2N-CH 75V 120A I4-PAC-5
VMK90-02T2
VMK90-02T2
IXYS
MOSFET 2N-CH 200V 83A TO-240AA
IXTH16N20D2
IXTH16N20D2
IXYS
MOSFET N-CH 200V 16A TO247
IXTA86N20T-TRL
IXTA86N20T-TRL
IXYS
MOSFET N-CH 200V 86A TO263
IXTA180N055T
IXTA180N055T
IXYS
MOSFET N-CH 55V 180A TO263
IXTU06N120P
IXTU06N120P
IXYS
MOSFET N-CH 1200V 600MA TO251
IXGH32N170
IXGH32N170
IXYS
IGBT 1700V 75A 350W TO247AD
IXA20I1200PB
IXA20I1200PB
IXYS
IGBT 1200V 33A 130W TO220
IXCP10M45A
IXCP10M45A
IXYS
IC CURRENT REGULATOR TO220AB