IXTP20N65X
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IXYS IXTP20N65X

Manufacturer No:
IXTP20N65X
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP20N65X Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 20A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:210mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1390 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):320W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP20N65X IXTP20N65X2   IXTP20N65XM  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 20A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 10A, 10V 185mOhm @ 10A, 10V 210mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 4.5V @ 250µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 27 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1390 pF @ 25 V 1450 pF @ 25 V 1390 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 320W (Tc) 290W (Tc) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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