IXTP1R4N60P
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IXYS IXTP1R4N60P

Manufacturer No:
IXTP1R4N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP1R4N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 1.4A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP1R4N60P IXTP14N60P  
Manufacturer IXYS IXYS
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V 550mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 5.5V @ 25µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V 2500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 50W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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