IXTP1R4N120P
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IXYS IXTP1R4N120P

Manufacturer No:
IXTP1R4N120P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP1R4N120P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 1.4A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:24.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:666 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):86W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP1R4N120P IXTP2R4N120P   IXTP1R4N100P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1000 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc) 2.4A (Tc) 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 250µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V 37 nC @ 10 V 17.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 25 V 1207 pF @ 25 V 450 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 86W (Tc) 125W (Tc) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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