IXTP1N80
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IXYS IXTP1N80

Manufacturer No:
IXTP1N80
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXTP1N80 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 750MA TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:220 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP1N80 IXTP1N80P   IXTP2N80  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 750mA (Tc) 1A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 11Ohm @ 500mA, 10V 14Ohm @ 500mA, 10V 6.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25µA 4V @ 50µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V 9 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V 250 pF @ 25 V 440 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 40W (Tc) 42W (Tc) 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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