IXTP1N100P
  • Share:

IXYS IXTP1N100P

Manufacturer No:
IXTP1N100P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP1N100P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 1A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:15.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:331 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.80
159

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP1N100P IXTP2N100P   IXTP3N100P   IXTP1N120P   IXTP1N100  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V 1200 V 1000 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 2A (Tc) 3A (Tc) 1A (Tc) 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 15Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V 4.8Ohm @ 1.5A, 10V 20Ohm @ 500mA, 10V 11Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 250µA 4.5V @ 50µA 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 10 V 24.3 nC @ 10 V 39 nC @ 10 V 17.6 nC @ 10 V 14.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 331 pF @ 25 V 655 pF @ 25 V 1100 pF @ 25 V 550 pF @ 25 V 400 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 50W (Tc) 86W (Tc) 125W (Tc) 63W (Tc) 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

AOD2N60
AOD2N60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 2A TO252
FQD4N50TM
FQD4N50TM
Fairchild Semiconductor
MOSFET N-CH 500V 2.6A DPAK
PJQ5442-AU_R2_000A1
PJQ5442-AU_R2_000A1
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
TK100S04N1L,LQ
TK100S04N1L,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 100A DPAK
IXTH1N200P3HV
IXTH1N200P3HV
IXYS
MOSFET N-CH 2000V 1A TO247HV
NVMFS5C410NLAFT1G
NVMFS5C410NLAFT1G
onsemi
MOSFET N-CH 40V 50A/330A 5DFN
IXTQ30N50L2
IXTQ30N50L2
IXYS
MOSFET N-CH 500V 30A TO3P
NTJS4151PT1
NTJS4151PT1
onsemi
MOSFET P-CH 20V 3.3A SOT-363
IXTH230N085T
IXTH230N085T
IXYS
MOSFET N-CH 85V 230A TO247
IRFZ34NSTRRPBF
IRFZ34NSTRRPBF
Infineon Technologies
MOSFET N-CH 55V 29A D2PAK
SI3853DV-T1-GE3
SI3853DV-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 1.6A 6TSOP
NTMFS4C10NT1G-001
NTMFS4C10NT1G-001
onsemi
MOSFET N-CH 30V 8.2A/46A 5DFN

Related Product By Brand

VBE17-12NO7
VBE17-12NO7
IXYS
BRIDGE RECT 1P 1.2KV 19A ECOPAC1
DGSS20-06CC
DGSS20-06CC
IXYS
DIODE ARRAY SCHOTTKY 600V 38A
DSI17-12A
DSI17-12A
IXYS
DIODE AVALANCHE 1.2KV 25A DO203
CMA50P1600FC
CMA50P1600FC
IXYS
MOD THYRISTOR DUAL 1600V I4-PAC
IXFP12N65X2
IXFP12N65X2
IXYS
MOSFET N-CH 650V 12A TO220AB
IXFH24N60X
IXFH24N60X
IXYS
MOSFET N-CH 600V 24A TO247-3
IXFE23N100
IXFE23N100
IXYS
MOSFET N-CH 1000V 21A SOT227B
IXTA88N085T
IXTA88N085T
IXYS
MOSFET N-CH 85V 88A TO263
IXTQ110N055P
IXTQ110N055P
IXYS
MOSFET N-CH 55V 110A TO3P
IXTH60N10
IXTH60N10
IXYS
MOSFET N-CH 100V 60A TO247
IXGH38N60
IXGH38N60
IXYS
IGBT 600V 76A 200W TO247AD
IXDD409SI
IXDD409SI
IXYS
IC GATE DRVR LOW-SIDE 8SOIC