IXTP180N10T
  • Share:

IXYS IXTP180N10T

Manufacturer No:
IXTP180N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP180N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 180A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:151 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):480W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$7.22
126

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP180N10T IXTP130N10T   IXTP160N10T  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 130A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 25A, 10V 9.1mOhm @ 25A, 10V 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 151 nC @ 10 V 104 nC @ 10 V 132 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V 5080 pF @ 25 V 6600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 480W (Tc) 360W (Tc) 430W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

DMP58D0LFB-7
DMP58D0LFB-7
Diodes Incorporated
MOSFET P-CH 50V 180MA 3DFN
IRFU5410PBF
IRFU5410PBF
Infineon Technologies
MOSFET P-CH 100V 13A IPAK
NVTFS4C25NWFTAG
NVTFS4C25NWFTAG
onsemi
MOSFET N-CH 30V 10.1A/22.1A 8DFN
IRFBC20SPBF
IRFBC20SPBF
Vishay Siliconix
MOSFET N-CH 600V 2.2A D2PAK
FKI10198
FKI10198
Sanken
MOSFET N-CH 100V 31A TO220F
IXFA130N15X3TRL
IXFA130N15X3TRL
IXYS
MOSFET N-CH 150V 130A TO263
IRFU3418PBF
IRFU3418PBF
Infineon Technologies
MOSFET N-CH 80V 70A IPAK
IRLI620GPBF
IRLI620GPBF
Vishay Siliconix
MOSFET N-CH 200V 4A TO220-3
SPB80N10L G
SPB80N10L G
Infineon Technologies
MOSFET N-CH 100V 80A TO263-3
NTD50N03RG
NTD50N03RG
onsemi
MOSFET N-CH 25V 7.8A/45A DPAK
NTLGF3402PT1G
NTLGF3402PT1G
onsemi
MOSFET P-CH 20V 2.3A 6DFN
DMP2004TK
DMP2004TK
Diodes Incorporated
DIODE

Related Product By Brand

MCO50-12IO1
MCO50-12IO1
IXYS
MOD THYRISTOR SGL 1200V SOT-227B
IXFK360N15T2
IXFK360N15T2
IXYS
MOSFET N-CH 150V 360A TO264AA
IXFN82N60P
IXFN82N60P
IXYS
MOSFET N-CH 600V 72A SOT-227B
IXFB62N80Q3
IXFB62N80Q3
IXYS
MOSFET N-CH 800V 62A PLUS264
IXTQ120N15P
IXTQ120N15P
IXYS
MOSFET N-CH 150V 120A TO3P
IXFT52N50P2
IXFT52N50P2
IXYS
MOSFET N-CH 500V 52A TO268
IXFN20N120P
IXFN20N120P
IXYS
MOSFET N-CH 1200V 20A SOT-227B
IXTA8PN50P
IXTA8PN50P
IXYS
MOSFET N-CH 500V 8A TO263
IXFN80N50Q2
IXFN80N50Q2
IXYS
MOSFET N-CH 500V 72A SOT227B
IXTQ80N28T
IXTQ80N28T
IXYS
MOSFET N-CH 280V 80A TO3P
IXGH30N120IH
IXGH30N120IH
IXYS
IGBT 1200V 50A TO-247
IXGH64N60B3
IXGH64N60B3
IXYS
IGBT 600V 460W TO247