IXTP180N085T
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IXYS IXTP180N085T

Manufacturer No:
IXTP180N085T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP180N085T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 85V 180A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):85 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):430W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP180N085T IXTP160N085T   IXTP180N055T  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V 85 V 55 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 160A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 5.5mOhm @ 25A, 10V 6mOhm @ 50A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 164 nC @ 10 V -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 25 V 6400 pF @ 25 V -
FET Feature - - -
Power Dissipation (Max) 430W (Tc) 360W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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