IXTP180N085T
  • Share:

IXYS IXTP180N085T

Manufacturer No:
IXTP180N085T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP180N085T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 85V 180A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):85 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):430W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
84

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP180N085T IXTP160N085T   IXTP180N055T  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V 85 V 55 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 160A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V -
Rds On (Max) @ Id, Vgs 5.5mOhm @ 25A, 10V 6mOhm @ 50A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 164 nC @ 10 V -
Vgs (Max) ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 25 V 6400 pF @ 25 V -
FET Feature - - -
Power Dissipation (Max) 430W (Tc) 360W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

TK20V60W5,LVQ
TK20V60W5,LVQ
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 20A 4DFN
SFR2955TF
SFR2955TF
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
HAF1002-92L
HAF1002-92L
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
2SK2009TE85LF
2SK2009TE85LF
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 200MA SC59-3
IRFBC20PBF
IRFBC20PBF
Vishay Siliconix
MOSFET N-CH 600V 2.2A TO220AB
ISC030N10NM6ATMA1
ISC030N10NM6ATMA1
Infineon Technologies
TRENCH >=100V PG-TDSON-8
2SK3142-E
2SK3142-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IRF7207
IRF7207
Infineon Technologies
MOSFET P-CH 20V 5.4A 8SO
FQP90N10V2
FQP90N10V2
onsemi
MOSFET N-CH 100V 90A TO220-3
NTZS3151PT5G
NTZS3151PT5G
onsemi
MOSFET P-CH 20V 860MA SOT563
SUP40P10-43-GE3
SUP40P10-43-GE3
Vishay Siliconix
MOSFET P-CH 100V 36A TO220AB
IPA80R310CEXKSA1
IPA80R310CEXKSA1
Infineon Technologies
MOSFET N-CH 800V 6.8A TO220

Related Product By Brand

DSP25-12A
DSP25-12A
IXYS
DIODE ARRAY GP 1200V 28A TO247AD
DSSK60-015A
DSSK60-015A
IXYS
DIODE ARRAY SCHOTTKY 150V TO247
DAA10EM1800PZ-TUB
DAA10EM1800PZ-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
IXFA10N60P
IXFA10N60P
IXYS
MOSFET N-CH 600V 10A TO263
IXTA28P065T
IXTA28P065T
IXYS
MOSFET P-CH 65V 28A TO263
IXTP1N80
IXTP1N80
IXYS
MOSFET N-CH 800V 750MA TO220AB
IXTP220N055T
IXTP220N055T
IXYS
MOSFET N-CH 55V 220A TO220AB
IXGN100N170
IXGN100N170
IXYS
IGBT MOD 1700V 160A 735W SOT227B
IXSP20N60B2D1
IXSP20N60B2D1
IXYS
IGBT 600V 35A 190W TO220
IXGT25N160
IXGT25N160
IXYS
IGBT 1600V 75A 300W TO268
IXGH30N60C3
IXGH30N60C3
IXYS
IGBT 600V 60A 220W TO247AD
IXGR24N120C3H1
IXGR24N120C3H1
IXYS
IGBT 1200V 48A ISOPLUS247