IXTP14N60P
  • Share:

IXYS IXTP14N60P

Manufacturer No:
IXTP14N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP14N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 14A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$4.64
99

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP14N60P IXTP14N60PM   IXTP1R4N60P   IXTP4N60P   IXTP10N60P  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 7A (Tc) 1.4A (Tc) 4A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 7A, 10V 550mOhm @ 7A, 10V 9Ohm @ 700mA, 10V 2Ohm @ 2A, 10V 740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5.5V @ 250µA 5.5V @ 25µA 5.5V @ 100µA 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 36 nC @ 10 V 5.2 nC @ 10 V 13 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V 2500 pF @ 25 V 140 pF @ 25 V 635 pF @ 25 V 1610 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 300W (Tc) 75W (Tc) 50W (Tc) 89W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220 Isolated Tab TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

IXTT1N450HV
IXTT1N450HV
IXYS
MOSFET N-CH 4500V 1A TO268
IRFS7430TRLPBF
IRFS7430TRLPBF
Infineon Technologies
MOSFET N-CH 40V 195A D2PAK
IPP60R105CFD7XKSA1
IPP60R105CFD7XKSA1
Infineon Technologies
MOSFET N CH
FQI7N80TU
FQI7N80TU
Fairchild Semiconductor
MOSFET N-CH 800V 6.6A I2PAK
SQ4470EY-T1_BE3
SQ4470EY-T1_BE3
Vishay Siliconix
MOSFET N-CH 60V 16A 8SOIC
IRF740R
IRF740R
Harris Corporation
N-CHANNEL POWER MOSFET
FCP400N80Z
FCP400N80Z
onsemi
MOSFET N-CH 800V 14A TO220-3
AOT9N70
AOT9N70
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 700V 9A TO220
IRF7413TRPBF
IRF7413TRPBF
Infineon Technologies
MOSFET N-CH 30V 13A 8SO
NTMFS4847NAT1G
NTMFS4847NAT1G
onsemi
MOSFET N-CH 30V 11.5A/85A 5DFN
CPH6341-M-TL-EX
CPH6341-M-TL-EX
onsemi
MOSFET P-CH 30V 5A CPH6
RW1C015UNT2R
RW1C015UNT2R
Rohm Semiconductor
MOSFET N-CH 20V 1.5A 6WEMT

Related Product By Brand

VUO36-16NO8
VUO36-16NO8
IXYS
BRIDGE RECT 3P 1.6KV 27A FO-B
VUO68-08NO7
VUO68-08NO7
IXYS
BRIDGE RECT 3P 800V 68A ECO-PAC1
VUB72-12NO1
VUB72-12NO1
IXYS
BRIDGE RECT 3P 1.2KV 110A V1-A
MDD26-14N1B
MDD26-14N1B
IXYS
DIODE MODULE 1.4KV 36A TO240AA
MEK250-12DA
MEK250-12DA
IXYS
DIODE MODULE 1.2KV 260A Y4-M6
DSA80C45HB
DSA80C45HB
IXYS
DIODE ARRAY SCHOTTKY 45V TO247AD
MCD161-20IO1
MCD161-20IO1
IXYS
MOD THYRISTOR/DIODE 2000V Y4-M6
VMM650-01F
VMM650-01F
IXYS
MOSFET 2N-CH 100V 680A Y3-LI
IXFP22N60P3
IXFP22N60P3
IXYS
MOSFET N-CH 600V 22A TO220AB
IXFH90N20X3
IXFH90N20X3
IXYS
MOSFET N-CH 200V 90A TO247
IXFH40N85X
IXFH40N85X
IXYS
MOSFET N-CH 850V 40A TO247
IXSQ20N60B2D1
IXSQ20N60B2D1
IXYS
IGBT 600V 35A 190W TO3P