IXTP120N04T2
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IXYS IXTP120N04T2

Manufacturer No:
IXTP120N04T2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP120N04T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 120A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3240 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP120N04T2 IXTP220N04T2   IXTP160N04T2   IXTP100N04T2  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 220A (Tc) 160A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 6.1mOhm @ 25A, 10V 3.5mOhm @ 50A, 10V 5mOhm @ 50A, 10V 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 112 nC @ 10 V 79 nC @ 10 V 25.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 25 V 6820 pF @ 25 V 4640 pF @ 25 V 2690 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 200W (Tc) 360W (Tc) 250W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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