IXTP110N12T2
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IXYS IXTP110N12T2

Manufacturer No:
IXTP110N12T2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP110N12T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 120V 110A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 55A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6570 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):517W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP110N12T2 IXTP140N12T2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V 120 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 55A, 10V 10mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 174 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6570 pF @ 25 V 9700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 517W (Tc) 577W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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