IXTP08N100P
  • Share:

IXYS IXTP08N100P

Manufacturer No:
IXTP08N100P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP08N100P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 800MA TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:11.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:240 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.76
68

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP08N100P IXTP08N120P   IXTP05N100P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1200 V 1000 V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc) 800mA (Tc) 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 20Ohm @ 500mA, 10V 25Ohm @ 500mA, 10V 30Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 4V @ 50µA 4.5V @ 50µA 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 11.3 nC @ 10 V 14 nC @ 10 V 8.1 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 25 V 333 pF @ 25 V 196 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 42W (Tc) 50W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BUK7623-75A,118
BUK7623-75A,118
Nexperia USA Inc.
N-CHANNEL TRENCHMOS STANDARD LEV
IRF9Z30PBF-BE3
IRF9Z30PBF-BE3
Vishay Siliconix
MOSFET P-CH 50V 18A TO220AB
STB22N60M6
STB22N60M6
STMicroelectronics
MOSFET N-CH 600V 15A D2PAK
CSD16340Q3
CSD16340Q3
Texas Instruments
MOSFET N-CH 25V 21A/60A 8VSON
SI3430DV-T1-GE3
SI3430DV-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 1.8A 6TSOP
DMN2024U-13
DMN2024U-13
Diodes Incorporated
MOSFET N-CH 20V 6.8A SOT23 T&R 1
XP236N2001TR-G
XP236N2001TR-G
Torex Semiconductor Ltd
MOSFET N-CH 30V 2A SOT23
DMJ70H900HJ3
DMJ70H900HJ3
Diodes Incorporated
MOSFET N-CH 700V 7A TO251
TK11A50D(STA4,Q,M)
TK11A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 11A TO220SIS
BUK92150-55A,118
BUK92150-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 11A DPAK
IRFBC30L
IRFBC30L
Vishay Siliconix
MOSFET N-CH 600V 3.6A I2PAK
STW19NM65N
STW19NM65N
STMicroelectronics
MOSFET N-CH 650V 15.5A TO247-3

Related Product By Brand

DSEC30-06B
DSEC30-06B
IXYS
DIODE ARRAY GP 600V 15A TO247AD
DSEP15-06BS-TRL
DSEP15-06BS-TRL
IXYS
POWER DIODE DISCRETES-FRED TO-26
IXTP120N075T2
IXTP120N075T2
IXYS
MOSFET N-CH 75V 120A TO220AB
IXFQ12N80P
IXFQ12N80P
IXYS
MOSFET N-CH 800V 12A TO3P
IXFT20N80Q
IXFT20N80Q
IXYS
MOSFET N-CH 800V 20A TO268
IXTA240N055T
IXTA240N055T
IXYS
MOSFET N-CH 55V 240A TO263
IXFN34N100
IXFN34N100
IXYS
MOSFET N-CH 1000V 34A SOT-227B
IXGT30N120B3D1
IXGT30N120B3D1
IXYS
IGBT 1200V 300W TO268
IXGT20N100
IXGT20N100
IXYS
IGBT 1000V 40A 150W TO268
IXGH25N100U1
IXGH25N100U1
IXYS
IGBT 1000V 50A 200W TO247AD
IXGR50N60A2U1
IXGR50N60A2U1
IXYS
IGBT 600V 75A 200W ISOPLUS247
IX2R11S3T/R
IX2R11S3T/R
IXYS
IC GATE DRVR HALF-BRIDGE 16SOIC