IXTP05N100P
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IXYS IXTP05N100P

Manufacturer No:
IXTP05N100P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP05N100P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 500MA TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:30Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:196 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP05N100P IXTP08N100P   IXTP05N100   IXTP05N100M  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc) 800mA (Tc) 750mA (Tc) 700mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 30Ohm @ 250mA, 10V 20Ohm @ 500mA, 10V 17Ohm @ 375mA, 10V 17Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id 4V @ 50µA 4V @ 50µA 4.5V @ 250µA 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 10 V 11.3 nC @ 10 V 7.8 nC @ 10 V 7.8 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 196 pF @ 25 V 240 pF @ 25 V 260 pF @ 25 V 260 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 50W (Tc) 42W (Tc) 40W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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