IXTP05N100M
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IXYS IXTP05N100M

Manufacturer No:
IXTP05N100M
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP05N100M Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 700MA TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:700mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:17Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:260 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP05N100M IXTP05N100P   IXTP05N100  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 700mA (Tc) 500mA (Tc) 750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 17Ohm @ 375mA, 10V 30Ohm @ 250mA, 10V 17Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25µA 4V @ 50µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.8 nC @ 10 V 8.1 nC @ 10 V 7.8 nC @ 10 V
Vgs (Max) ±30V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 25 V 196 pF @ 25 V 260 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 25W (Tc) 50W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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