IXTP02N120P
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IXYS IXTP02N120P

Manufacturer No:
IXTP02N120P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP02N120P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 200MA TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:75Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:4.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:104 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number IXTP02N120P IXTP08N120P   IXTP06N120P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc) 800mA (Tc) 600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 75Ohm @ 100mA, 10V 25Ohm @ 500mA, 10V 32Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 10 V 14 nC @ 10 V 13.3 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 104 pF @ 25 V 333 pF @ 25 V 270 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 33W (Tc) 50W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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