IXTP02N120P
  • Share:

IXYS IXTP02N120P

Manufacturer No:
IXTP02N120P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTP02N120P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 200MA TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:75Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:4.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:104 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.68
225

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTP02N120P IXTP08N120P   IXTP06N120P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc) 800mA (Tc) 600mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 75Ohm @ 100mA, 10V 25Ohm @ 500mA, 10V 32Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 10 V 14 nC @ 10 V 13.3 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 104 pF @ 25 V 333 pF @ 25 V 270 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 33W (Tc) 50W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

NTGS4111PT1G
NTGS4111PT1G
onsemi
MOSFET P-CH 30V 2.6A 6TSOP
MSC035SMA170S
MSC035SMA170S
Microchip Technology
MOSFET SIC 1700V 35 MOHM TO-268
TK380A65Y,S4X
TK380A65Y,S4X
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
SQA440CEJW-T1_GE3
SQA440CEJW-T1_GE3
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 40 V (D-S)
TPC8133,LQ(S
TPC8133,LQ(S
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 9A 8SOP
NVMFS5C404NAFT1G
NVMFS5C404NAFT1G
onsemi
MOSFET N-CH 40V 53A/378A 5DFN
IXFN32N120
IXFN32N120
IXYS
MOSFET N-CH 1200V 32A SOT-227B
IRF840STRR
IRF840STRR
Vishay Siliconix
MOSFET N-CH 500V 8A D2PAK
BSP170PE6327
BSP170PE6327
Infineon Technologies
MOSFET P-CH 60V 1.9A SOT223-4
NTP75N03L09G
NTP75N03L09G
onsemi
MOSFET N-CH 30V 75A TO220AB
BS170ZL1G
BS170ZL1G
onsemi
MOSFET N-CH 60V 500MA TO92-3
IPB80N06S2LH5ATMA4
IPB80N06S2LH5ATMA4
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3

Related Product By Brand

IXBOD1-25RD
IXBOD1-25RD
IXYS
IC DIODE MODULE BOD 0.2A 2500V
MDD142-16N1
MDD142-16N1
IXYS
DIODE MODULE 1.6KV 165A Y4-M6
MCC200-18IO1
MCC200-18IO1
IXYS
MOD THYRISTOR DUAL 1800V Y4-M6
MCC224-20IO1
MCC224-20IO1
IXYS
MOD THYRISTOR DUAL 2000V Y1-CU
IXTQ52N30P
IXTQ52N30P
IXYS
MOSFET N-CH 300V 52A TO3P
IXFA3N120-TRL
IXFA3N120-TRL
IXYS
MOSFET N-CH 1200V 3A TO263
IXTA20N65X
IXTA20N65X
IXYS
MOSFET N-CH 650V 20A TO263
IXFQ94N30P3
IXFQ94N30P3
IXYS
MOSFET N-CH 300V 94A TO3P
IXFT70N20Q3
IXFT70N20Q3
IXYS
MOSFET N-CH 200V 70A TO268
IXXN340N65B4
IXXN340N65B4
IXYS
IGBT MODULE DISC IGBT SOT227B
IXDH35N60BD1
IXDH35N60BD1
IXYS
IGBT 600V 60A 250W TO247AD
IXGR32N170AH1
IXGR32N170AH1
IXYS
IGBT 1700V 26A 200W ISOPLUS247