IXTN8N150L
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IXYS IXTN8N150L

Manufacturer No:
IXTN8N150L
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTN8N150L Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1500V 7.5A SOT-227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:3.6Ohm @ 4A, 20V
Vgs(th) (Max) @ Id:8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:250 nC @ 15 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:8000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):545W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXTN8N150L IXTK8N150L  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 4A, 20V 3.6Ohm @ 4A, 20V
Vgs(th) (Max) @ Id 8V @ 250µA 8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 15 V 250 nC @ 15 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 8000 pF @ 25 V 8000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 545W (Tc) 700W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B TO-264 (IXTK)
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA

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