IXYS-IXTN660N04T4 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	660A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	0.85mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	860 nC @ 10 V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	44000 pF @ 25 V
FET Feature:	Current Sensing
Power Dissipation (Max):	1040W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Supplier Device Package:	SOT-227B
Package / Case:	SOT-227-4, miniBLOC

IXYS IXTN660N04T4