IXTN60N50L2
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IXYS IXTN60N50L2

Manufacturer No:
IXTN60N50L2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTN60N50L2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 53A SOT227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:53A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:610 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:24000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):735W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXTN60N50L2 IXTK60N50L2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 53A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 30A, 10V 100mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 610 nC @ 10 V 610 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 24000 pF @ 25 V 24000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 735W (Tc) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B TO-264 (IXTK)
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA

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