IXTN600N04T2
  • Share:

IXYS IXTN600N04T2

Manufacturer No:
IXTN600N04T2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTN600N04T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 600A SOT227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:600A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.05mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:590 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):940W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

$36.87
5

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTN600N04T2 IXTK600N04T2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 600A (Tc) 600A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.05mOhm @ 100A, 10V 1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 590 nC @ 10 V 590 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40000 pF @ 25 V 40000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 940W (Tc) 1250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B TO-264 (IXTK)
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA

Related Product By Categories

STFI6N65K3
STFI6N65K3
STMicroelectronics
MOSFET N-CH 650V 5.4A I2PAKFP
IXTP1R4N120P
IXTP1R4N120P
IXYS
MOSFET N-CH 1200V 1.4A TO220AB
IXTH4N150
IXTH4N150
IXYS
MOSFET N-CH 1500V 4A TO247
DI035N10PT
DI035N10PT
Diotec Semiconductor
MOSFET, 100V, 35A, N, 25W
IXFN106N20
IXFN106N20
IXYS
MOSFET N-CH 200V 106A SOT-227B
IRFR120_R4941
IRFR120_R4941
onsemi
MOSFET N-CH 100V 8.4A TO252AA
IRFR5305TRRPBF
IRFR5305TRRPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
STB11NM60-1
STB11NM60-1
STMicroelectronics
MOSFET N-CH 650V 11A I2PAK
SI3433BDV-T1-E3
SI3433BDV-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 4.3A 6TSOP
IXTH30N50
IXTH30N50
IXYS
MOSFET N-CH 500V 30A TO247
IRF7524D1TRPBF
IRF7524D1TRPBF
Infineon Technologies
MOSFET P-CH 20V 1.7A MICRO8
SSM3K301T(TE85L,F)
SSM3K301T(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 3.5A TSM

Related Product By Brand

MCO500-18IO1
MCO500-18IO1
IXYS
MOD THYRISTOR SGL 1800V Y1-CU
IXTP14N60X2
IXTP14N60X2
IXYS
MOSFET N-CH 600V 14A TO220
IXFH56N30X3
IXFH56N30X3
IXYS
MOSFET N-CH 300V 56A TO247
IXFN64N50P
IXFN64N50P
IXYS
MOSFET N-CH 500V 61A SOT227B
IXFN170N25X3
IXFN170N25X3
IXYS
MOSFET N-CH 250V 170A SOT227B
IXTA2N100P-TRL
IXTA2N100P-TRL
IXYS
MOSFET N-CH 1000V 2A TO263
IXGH10N170
IXGH10N170
IXYS
IGBT 1700V 20A 110W TO247
IXGT6N170AHV
IXGT6N170AHV
IXYS
IGBT 1700V 6A 75W TO268
IXBX64N250
IXBX64N250
IXYS
IGBT 2500V
IXGT20N120BD1
IXGT20N120BD1
IXYS
IGBT 1200V 40A 190W TO268
IXGH36N60B3C1
IXGH36N60B3C1
IXYS
IGBT 600V 75A 250W TO247
IXDI402SI
IXDI402SI
IXYS
IC GATE DRVR LOW-SIDE 8SOIC