IXTN32P60P
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IXYS IXTN32P60P

Manufacturer No:
IXTN32P60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTN32P60P Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 600V 32A SOT227B
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:196 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):890W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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$36.28
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Similar Products

Part Number IXTN32P60P IXTK32P60P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 500mA, 10V 350mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V 196 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11100 pF @ 25 V 11100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 890W (Tc) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B TO-264 (IXTK)
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA

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