IXTN32P60P
  • Share:

IXYS IXTN32P60P

Manufacturer No:
IXTN32P60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTN32P60P Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 600V 32A SOT227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:196 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):890W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

$36.28
19

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTN32P60P IXTK32P60P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 500mA, 10V 350mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V 196 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11100 pF @ 25 V 11100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 890W (Tc) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B TO-264 (IXTK)
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA

Related Product By Categories

NP90N04VDG-E1-AY
NP90N04VDG-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 40V 90A TO252
IXFQ22N60P3
IXFQ22N60P3
IXYS
MOSFET N-CH 600V 22A TO3P
IPD70R600P7SAUMA1
IPD70R600P7SAUMA1
Infineon Technologies
MOSFET N-CH 700V 8.5A TO252-3
IXFR32N80Q3
IXFR32N80Q3
IXYS
MOSFET N-CH 800V 24A ISOPLUS247
IRFB3307PBF
IRFB3307PBF
Infineon Technologies
MOSFET N-CH 75V 130A TO220AB
IXFX90N30
IXFX90N30
IXYS
MOSFET N-CH 300V 90A PLUS247-3
ZVP0120ASTOB
ZVP0120ASTOB
Diodes Incorporated
MOSFET P-CH 200V 110MA E-LINE
BSC059N03ST
BSC059N03ST
Infineon Technologies
MOSFET N-CH 30V 19A/89A TDSON
IXTP8N50PM
IXTP8N50PM
IXYS
MOSFET N-CH 500V 4A TO220AB
SUM09N20-270-E3
SUM09N20-270-E3
Vishay Siliconix
MOSFET N-CH 200V 9A TO263
IXFX210N17T
IXFX210N17T
IXYS
MOSFET N-CH 170V 210A PLUS247-3
PMN50XP,165
PMN50XP,165
NXP USA Inc.
MOSFET P-CH 20V 4.8A 6TSOP

Related Product By Brand

DSA50C100HB
DSA50C100HB
IXYS
DIODE ARRAY SCHOTTKY 100V TO247
DSEI8-06A
DSEI8-06A
IXYS
DIODE GEN PURP 600V 8A TO220AC
DSAI17-18A
DSAI17-18A
IXYS
DIODE AVALANCHE 1.8KV 25A DO203
MMO74-16IO6
MMO74-16IO6
IXYS
MODULE AC CTLR 1600V SOT-227B
IXTP80N075L2
IXTP80N075L2
IXYS
MOSFET N-CH 75V 80A TO220AB
IXTA5N50P
IXTA5N50P
IXYS
MOSFET N-CH 500V 4.8A TO263
IXTH120N15T
IXTH120N15T
IXYS
MOSFET N-CH 150V 120A TO247
IXTP24N15T
IXTP24N15T
IXYS
MOSFET N-CH 150V 24A TO220AB
IXGT72N60A3
IXGT72N60A3
IXYS
IGBT 600V 75A 540W TO268
IXYH20N120C3D1
IXYH20N120C3D1
IXYS
IGBT 1200V 36A 230W TO-247AD
IXGX35N120B
IXGX35N120B
IXYS
IGBT 1200V 70A 350W PLUS247
IXA611S3T/R
IXA611S3T/R
IXYS
IC GATE DRVR HALF-BRIDGE 16SOIC