IXTN32P60P
  • Share:

IXYS IXTN32P60P

Manufacturer No:
IXTN32P60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTN32P60P Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 600V 32A SOT227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:196 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):890W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

$36.28
19

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTN32P60P IXTK32P60P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 500mA, 10V 350mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V 196 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11100 pF @ 25 V 11100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 890W (Tc) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B TO-264 (IXTK)
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA

Related Product By Categories

IXFP7N80P
IXFP7N80P
IXYS
MOSFET N-CH 800V 7A TO220AB
TSM090N03CP ROG
TSM090N03CP ROG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 30V 50A TO252
C3M0160120D
C3M0160120D
Wolfspeed, Inc.
SICFET N-CH 1200V 17A TO247-3
IPZA60R037P7XKSA1
IPZA60R037P7XKSA1
Infineon Technologies
MOSFET N-CH 600V 76A TO247-4
SI7726DN-T1-GE3
SI7726DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 35A PPAK1212-8
IXFA24N60X
IXFA24N60X
IXYS
MOSFET N-CH 600V 24A TO263AA
IRFR5410TRL
IRFR5410TRL
Infineon Technologies
MOSFET P-CH 100V 13A DPAK
IRFS4310TRRPBF
IRFS4310TRRPBF
Infineon Technologies
MOSFET N-CH 100V 130A D2PAK
SIA448DJ-T1-GE3
SIA448DJ-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 12A PPAK SC70-6
SCT3080AW7TL
SCT3080AW7TL
Rohm Semiconductor
SICFET N-CH 650V 29A TO263-7
RQ5H025TNTL
RQ5H025TNTL
Rohm Semiconductor
MOSFET N-CH 45V 2.5A TSMT3
RQ3P300BETB1
RQ3P300BETB1
Rohm Semiconductor
MOSFET N-CH 100V 10A/36A 8HSMT

Related Product By Brand

DHG50X1200NA
DHG50X1200NA
IXYS
DIODE MODULE 1.2KV 25A SOT227B
DSEE8-08CC
DSEE8-08CC
IXYS
DIODE ARRAY 800V 10A ISOPLUS220
MCMA50P1600TA
MCMA50P1600TA
IXYS
SCR MODULE 1.6KV 50A TO240AA
MCD44-08IO8B
MCD44-08IO8B
IXYS
MOD THYRISTOR DUAL 800V TO-240AA
MCD95-14IO1B
MCD95-14IO1B
IXYS
MOD THYRISTOR/DIO 1400V TO-240AA
IXTP24P085T
IXTP24P085T
IXYS
MOSFET P-CH 85V 24A TO220AB
IXFP20N50P3M
IXFP20N50P3M
IXYS
MOSFET N-CH 500V 8A TO220AB
IXFH70N20Q3
IXFH70N20Q3
IXYS
MOSFET N-CH 200V 70A TO247AD
IXFK100N10
IXFK100N10
IXYS
MOSFET N-CH 100V 100A TO264AA
IXGP24N120C3
IXGP24N120C3
IXYS
IGBT 1200V 48A 250W TO220
IXCP50M45A
IXCP50M45A
IXYS
IC CURRENT REGULATOR TO220AB
IXDI504SIAT/R
IXDI504SIAT/R
IXYS
IC GATE DRVR LOW-SIDE 8SOIC