IXTN22N100L
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IXYS IXTN22N100L

Manufacturer No:
IXTN22N100L
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTN22N100L Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 22A SOT227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:600mOhm @ 11A, 20V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:270 nC @ 15 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:7050 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):700W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXTN22N100L IXTK22N100L  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 600mOhm @ 11A, 20V 600mOhm @ 11A, 20V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 15 V 270 nC @ 15 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 7050 pF @ 25 V 7050 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 700W (Tc) 700W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B TO-264 (IXTK)
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA

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