IXTN200N10L2
  • Share:

IXYS IXTN200N10L2

Manufacturer No:
IXTN200N10L2
Manufacturer:
IXYS
Package:
Bulk
Datasheet:
IXTN200N10L2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 178A SOT227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:178A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:540 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):830W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

$47.97
20

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTN200N10L2 IXTK200N10L2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 178A (Tc) 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 10V 11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 540 nC @ 10 V 540 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V 23000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 830W (Tc) 1040W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B TO-264 (IXTK)
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA

Related Product By Categories

PMV52ENER
PMV52ENER
Nexperia USA Inc.
PMV52ENE/SOT23/TO-236AB
SSM3J351R,LF
SSM3J351R,LF
Toshiba Semiconductor and Storage
MOSFET P-CH 60V 3.5A SOT-23F
SIA437DJ-T1-GE3
SIA437DJ-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 29.7A PPAK SC70
SSM6J414TU,LF
SSM6J414TU,LF
Toshiba Semiconductor and Storage
MOSFET P CH 20V 6A UF6
FDC3612
FDC3612
onsemi
MOSFET N-CH 100V 2.6A SUPERSOT6
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
IXTA130N10T7
IXTA130N10T7
IXYS
MOSFET N-CH 100V 130A TO263
IXTH50N20
IXTH50N20
IXYS
MOSFET N-CH 200V 50A TO247
CMPDM302PH TR
CMPDM302PH TR
Central Semiconductor Corp
MOSFET P-CH 30V 2.4A SOT-23F
PMN27UPH
PMN27UPH
Nexperia USA Inc.
MOSFET P-CH 20V 5.7A 6TSOP
SI2372DS-T1-GE3
SI2372DS-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 4A/5.3A SOT23-3
BUK9E1R6-30E,127
BUK9E1R6-30E,127
NXP USA Inc.
MOSFET N-CH 30V 120A I2PAK

Related Product By Brand

VBO22-16NO8
VBO22-16NO8
IXYS
BRIDGE RECT 1P 1.6KV 21A FO-B
VUO110-08NO7
VUO110-08NO7
IXYS
BRIDGE RECT 3P 800V 127A PWS-E1
DSS2X121-0045B
DSS2X121-0045B
IXYS
DIODE MODULE 45V 120A SOT227B
MCO25-12IO1
MCO25-12IO1
IXYS
MOD THYRISTOR SGL 1200V SOT-227B
IXFN200N10P
IXFN200N10P
IXYS
MOSFET N-CH 100V 200A SOT-227B
IXTH440N055T2
IXTH440N055T2
IXYS
MOSFET N-CH 55V 440A TO247
IXFK32N80Q3
IXFK32N80Q3
IXYS
MOSFET N-CH 800V 32A TO264AA
IXTP160N085T
IXTP160N085T
IXYS
MOSFET N-CH 85V 160A TO220AB
IXTH60N25
IXTH60N25
IXYS
MOSFET N-CH 250V 60A TO247
IXTV102N25T
IXTV102N25T
IXYS
MOSFET N-CH 250V 102A PLUS220
IXBT12N300HV
IXBT12N300HV
IXYS
IGBT 3000V 30A 160W TO268
IXSH15N120B
IXSH15N120B
IXYS
IGBT 1200V 30A 150W TO247