IXTN200N10L2
  • Share:

IXYS IXTN200N10L2

Manufacturer No:
IXTN200N10L2
Manufacturer:
IXYS
Package:
Bulk
Datasheet:
IXTN200N10L2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 178A SOT227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:178A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:540 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):830W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

$47.97
20

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTN200N10L2 IXTK200N10L2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 178A (Tc) 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 10V 11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 540 nC @ 10 V 540 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V 23000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 830W (Tc) 1040W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B TO-264 (IXTK)
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA

Related Product By Categories

IPB015N08N5ATMA1
IPB015N08N5ATMA1
Infineon Technologies
MOSFET N-CH 80V 180A TO263-7
HUFA76419P3
HUFA76419P3
Fairchild Semiconductor
MOSFET N-CH 60V 29A TO220-3
NTE2922
NTE2922
NTE Electronics, Inc
MOSFET N-CHANNEL 400V 16A TO3P
NP40N055KHE-E1-AZ
NP40N055KHE-E1-AZ
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IRL530NPBF
IRL530NPBF
Infineon Technologies
MOSFET N-CH 100V 17A TO220AB
PMZ390UNE/S500315
PMZ390UNE/S500315
NXP USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
IXTA6N100D2-TRL
IXTA6N100D2-TRL
IXYS
MOSFET N-CH 1000V 6A TO263
BUK9275-100A,118
BUK9275-100A,118
NXP Semiconductors
NOW NEXPERIA BUK9275-100A - 21.7
GT088N06T
GT088N06T
Goford Semiconductor
N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
AON6532
AON6532
Alpha & Omega Semiconductor Inc.
MOSFET N CH 30V 27A 8DFN
NTMFS4C05NT1G-001
NTMFS4C05NT1G-001
onsemi
MOSFET N-CH 30V 11.9A/78A 5DFN
AO4447AL_201
AO4447AL_201
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 17A 8SOIC

Related Product By Brand

DSEI2X61-06C
DSEI2X61-06C
IXYS
DIODE MODULE 600V 60A SOT227B
DHG100X1200NA
DHG100X1200NA
IXYS
DIODE MODULE 1.2KV 50A SOT227B
DSEI36-06AS-TRL
DSEI36-06AS-TRL
IXYS
DIODE FAST REC 600V 37A TO263AB
DH20-18A
DH20-18A
IXYS
DIODE GEN PURP 1.8KV 20A TO247
MCO450-22IO1
MCO450-22IO1
IXYS
MOD THYRISTOR SGL 2200V Y1-CU
IXTA120P065T-TRL
IXTA120P065T-TRL
IXYS
MOSFET P-CH 65V 120A TO263
IXTT60N20L2
IXTT60N20L2
IXYS
MOSFET N-CH 200V 60A TO268
IXFH12N120
IXFH12N120
IXYS
MOSFET N-CH 1200V 12A TO247AD
IXGH50N90B2D1
IXGH50N90B2D1
IXYS
IGBT 900V 75A 400W TO247AD
IXBH12N300
IXBH12N300
IXYS
IGBT 3000V 30A 160W TO247
IXGH12N120A2D1
IXGH12N120A2D1
IXYS
IGBT 1200V 12A TO-247
IXSX50N60BU1
IXSX50N60BU1
IXYS
IGBT 600V 75A 300W PLUS247