IXTN120P20T
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IXYS IXTN120P20T

Manufacturer No:
IXTN120P20T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTN120P20T Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 200V 106A SOT227B
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:740 nC @ 10 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:73000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):830W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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$57.41
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Similar Products

Part Number IXTN120P20T IXTK120P20T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 106A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 30mOhm @ 60A, 10V 30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 740 nC @ 10 V 740 nC @ 10 V
Vgs (Max) ±15V -
Input Capacitance (Ciss) (Max) @ Vds 73000 pF @ 25 V 73000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 830W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Chassis Mount Through Hole
Supplier Device Package SOT-227B TO-264 (IXTK)
Package / Case SOT-227-4, miniBLOC TO-264-3, TO-264AA

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