IXTL2N470
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IXYS IXTL2N470

Manufacturer No:
IXTL2N470
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTL2N470 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 4700V 2A I5PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):4700 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):220W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUSi5-Pak™
Package / Case:ISOPLUSi5-Pak™
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Similar Products

Part Number IXTL2N470 IXTL2N450  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 4700 V 4500 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 20Ohm @ 1A, 10V 23Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 6V @ 250µA 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 156 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6860 pF @ 25 V 6900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 220W (Tc) 220W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package ISOPLUSi5-Pak™ ISOPLUSi5-Pak™
Package / Case ISOPLUSi5-Pak™ ISOPLUSi5-Pak™

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