IXTK600N04T2
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IXYS IXTK600N04T2

Manufacturer No:
IXTK600N04T2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTK600N04T2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 600A TO264
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:600A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:590 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264 (IXTK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXTK600N04T2 IXTN600N04T2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 600A (Tc) 600A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.5mOhm @ 100A, 10V 1.05mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 590 nC @ 10 V 590 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40000 pF @ 25 V 40000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1250W (Tc) 940W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Chassis Mount
Supplier Device Package TO-264 (IXTK) SOT-227B
Package / Case TO-264-3, TO-264AA SOT-227-4, miniBLOC

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