IXTK21N100
  • Share:

IXYS IXTK21N100

Manufacturer No:
IXTK21N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTK21N100 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 21A TO264
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264 (IXTK)
Package / Case:TO-264-3, TO-264AA
0 Remaining View Similar

In Stock

-
395

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTK21N100 IXTN21N100  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 500mA, 10V 550mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 500µA 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V 250 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 25 V 8400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Chassis Mount
Supplier Device Package TO-264 (IXTK) SOT-227B
Package / Case TO-264-3, TO-264AA SOT-227-4, miniBLOC

Related Product By Categories

5HP01M-TL-E-FS
5HP01M-TL-E-FS
Fairchild Semiconductor
MOSFET P-CH 50V 0.07A MCP3
MGSF3455VT1
MGSF3455VT1
onsemi
P-CHANNEL POWER MOSFET
FDFS2P753Z
FDFS2P753Z
Fairchild Semiconductor
MOSFET P-CH 30V 3A 8SOIC
STS13N3LLH5
STS13N3LLH5
STMicroelectronics
MOSFET N-CH 30V 13A 8SO
STD15N60M2-EP
STD15N60M2-EP
STMicroelectronics
MOSFET N-CH 600V 11A DPAK
IRFU7746PBF
IRFU7746PBF
Infineon Technologies
MOSFET N-CH 75V 56A IPAK
NVMFS5C423NLAFT1G
NVMFS5C423NLAFT1G
onsemi
MOSFET N-CH 40V 31A/150A 5DFN
SIHG22N65E-GE3
SIHG22N65E-GE3
Vishay Siliconix
MOSFET N-CH 650V 22A TO247AC
IPP09N03LA
IPP09N03LA
Infineon Technologies
MOSFET N-CH 25V 50A TO220-3
SPI80N06S2-08
SPI80N06S2-08
Infineon Technologies
MOSFET N-CH 55V 80A TO262-3
APT5SM170B
APT5SM170B
Microsemi Corporation
SICFET N-CH 1700V 5A TO247-3
RP1H065SPTR
RP1H065SPTR
Rohm Semiconductor
MOSFET P-CH 45V 6.5A MPT6

Related Product By Brand

DSEP30-12A
DSEP30-12A
IXYS
DIODE GEN PURP 1.2KV 30A TO247AD
DMA150E1600NA
DMA150E1600NA
IXYS
DIODE GP 1.6KV 150A SOT227B
DSS10-006A
DSS10-006A
IXYS
DIODE SCHOTTKY 60V 10A TO220AC
MCD95-08IO8B
MCD95-08IO8B
IXYS
THYRISTOR DOUB 800V 116A TO-240
MCD225-18IO1
MCD225-18IO1
IXYS
MOD THYRISTOR/DIODE 1800V Y1-CU
CS19-12HO1
CS19-12HO1
IXYS
SCR 1.2KV 29A TO220AB
IXTA64N10L2
IXTA64N10L2
IXYS
MOSFET N-CH 100V 64A TO263AA
IXFQ12N80P
IXFQ12N80P
IXYS
MOSFET N-CH 800V 12A TO3P
IXTU5N50P
IXTU5N50P
IXYS
MOSFET N-CH 500V 4.8A TO252
IXTQ98N20T
IXTQ98N20T
IXYS
MOSFET N-CH 200V 98A TO3P
IXA45IF1200HB
IXA45IF1200HB
IXYS
IGBT 1200V 78A 325W TO247
IXGA20N60B
IXGA20N60B
IXYS
IGBT 600V 40A 150W TO263AA