IXTK200N10L2
  • Share:

IXYS IXTK200N10L2

Manufacturer No:
IXTK200N10L2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTK200N10L2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 200A TO264
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:540 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1040W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264 (IXTK)
Package / Case:TO-264-3, TO-264AA
0 Remaining View Similar

In Stock

$37.48
12

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTK200N10L2 IXTN200N10L2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc) 178A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 100A, 10V 11mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 540 nC @ 10 V 540 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V 23000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1040W (Tc) 830W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Chassis Mount
Supplier Device Package TO-264 (IXTK) SOT-227B
Package / Case TO-264-3, TO-264AA SOT-227-4, miniBLOC

Related Product By Categories

BSP250,135
BSP250,135
Nexperia USA Inc.
MOSFET P-CH 30V 3A SOT223
IPA80R280P7XKSA1
IPA80R280P7XKSA1
Infineon Technologies
MOSFET N-CH 800V 17A TO220-3F
IPAN60R280PFD7SXKSA1
IPAN60R280PFD7SXKSA1
Infineon Technologies
CONSUMER PG-TO220-3
FCD2250N80Z
FCD2250N80Z
onsemi
MOSFET N-CH 800V 2.6A DPAK
HUFA76409D3ST
HUFA76409D3ST
Fairchild Semiconductor
N-CHANNEL LOGIC LEVEL ULTRAFET
IXTP76N25T
IXTP76N25T
IXYS
MOSFET N-CH 250V 76A TO220AB
SPB80N06S2L-H5
SPB80N06S2L-H5
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
NTR3162PT3G
NTR3162PT3G
onsemi
MOSFET P-CH 20V 2.2A SOT23-3
BS170ZL1G
BS170ZL1G
onsemi
MOSFET N-CH 60V 500MA TO92-3
STP16N50M2
STP16N50M2
STMicroelectronics
MOSFET N-CH 500V 13A TO220
AO3487
AO3487
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3
PMN35EN,115
PMN35EN,115
NXP USA Inc.
MOSFET N-CH 30V 5.1A 6TSOP

Related Product By Brand

DSI30-16AS-TUB
DSI30-16AS-TUB
IXYS
DIODE GEN PURP 1.6KV 30A TO263
IXTX32P60P
IXTX32P60P
IXYS
MOSFET P-CH 600V 32A PLUS247-3
IXFA72N30X3
IXFA72N30X3
IXYS
MOSFET N-CH 300V 72A TO263AA
IXTA260N055T2
IXTA260N055T2
IXYS
MOSFET N-CH 55V 260A TO263
IXTV250N075T
IXTV250N075T
IXYS
MOSFET N-CH 75V 250A PLUS220
IXTQ102N20T
IXTQ102N20T
IXYS
MOSFET N-CH 200V 102A TO3P
MUBW10-06A7
MUBW10-06A7
IXYS
IGBT MODULE 600V 20A 85W E2
IXGH40N60B2D1
IXGH40N60B2D1
IXYS
IGBT 600V 75A 300W TO247
IXST45N120B
IXST45N120B
IXYS
IGBT 1200V 75A 300W TO268
IXGR24N60CD1
IXGR24N60CD1
IXYS
IGBT 600V 42A 80W ISOPLUS247
IXGT32N60BD1
IXGT32N60BD1
IXYS
IGBT 600V 60A 200W TO268
IXSK50N60AU1
IXSK50N60AU1
IXYS
IGBT 600V 75A 300W TO264AA