IXTK170P10P
  • Share:

IXYS IXTK170P10P

Manufacturer No:
IXTK170P10P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXTK170P10P Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 100V 170A TO264
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:240 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):890W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264 (IXTK)
Package / Case:TO-264-3, TO-264AA
0 Remaining View Similar

In Stock

$22.50
2

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXTK170P10P IXTN170P10P   IXTK170N10P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 170A (Tc) 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 500mA, 10V 12mOhm @ 500mA, 10V 9mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V 240 nC @ 10 V 198 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12600 pF @ 25 V 12600 pF @ 25 V 6000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 890W (Tc) 890W (Tc) 715W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Chassis Mount Through Hole
Supplier Device Package TO-264 (IXTK) SOT-227B TO-264 (IXTK)
Package / Case TO-264-3, TO-264AA SOT-227-4, miniBLOC TO-264-3, TO-264AA

Related Product By Categories

BSC0403NSATMA1
BSC0403NSATMA1
Infineon Technologies
150V, N-CH MOSFET, LOGIC LEVEL,
IMZA65R072M1HXKSA1
IMZA65R072M1HXKSA1
Infineon Technologies
MOSFET 650V NCH SIC TRENCH
ZVNL110A
ZVNL110A
Diodes Incorporated
MOSFET N-CH 100V 320MA TO92-3
IRFBE30STRLPBF
IRFBE30STRLPBF
Vishay Siliconix
MOSFET N-CH 800V 4.1A D2PAK
DMP2305UQ-7
DMP2305UQ-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT23 T&R 3
STI150N10F7
STI150N10F7
STMicroelectronics
MOSFET N-CH 100V 110A I2PAK
IRFP4710PBF
IRFP4710PBF
Infineon Technologies
MOSFET N-CH 100V 72A TO247AC
NTF3055L175T1G
NTF3055L175T1G
onsemi
MOSFET N-CH 60V 2A SOT223
2SK4017(Q)
2SK4017(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 5A PW-MOLD2
AO6400_201
AO6400_201
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 6.9A 6TSOP
SISS5710DN-T1-GE3
SISS5710DN-T1-GE3
Vishay Siliconix
N-CHANNEL 150 V (D-S) MOSFET POW
RTF015N03TL
RTF015N03TL
Rohm Semiconductor
MOSFET N-CH 30V 1.5A TUMT3

Related Product By Brand

VUO86-16NO7
VUO86-16NO7
IXYS
BRIDGE RECT 3P 1.6KV 86A ECOPAC1
DSSK40-008B
DSSK40-008B
IXYS
DIODE ARRAY SCHOTTKY 80V TO247AD
MCC132-18IO1B
MCC132-18IO1B
IXYS
BIPOLAR MODULE - THYRISTOR Y4-M
IXFQ34N50P3
IXFQ34N50P3
IXYS
MOSFET N-CH 500V 34A TO3P
IXFH80N65X2
IXFH80N65X2
IXYS
MOSFET N-CH 650V 80A TO247
IXTK400N15X4
IXTK400N15X4
IXYS
MOSFET N-CH 150V 400A TO264
IXTA4N60P
IXTA4N60P
IXYS
MOSFET N-CH 600V 4A TO263
IXTA160N075T
IXTA160N075T
IXYS
MOSFET N-CH 75V 160A TO263
IXGA42N30C3
IXGA42N30C3
IXYS
IGBT 300V 223W TO263AA
IXGH39N60BD1
IXGH39N60BD1
IXYS
IGBT 600V 76A 200W TO247AD
IX2C11S1
IX2C11S1
IXYS
IC GATE DRVR HALF BRIDGE 8SOIC